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| HITFET= BTS 3134 D Smart Lowside Power Switch Features Logic Level Input Input Protection (ESD) Thermal shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) I D(Nom) EAS 42 50 3.5 3 V m A J HITFET Current Limitation In Pin 1 OvervoltageProtection Gate-Driving Unit Overtemperature Protection ESD Overload Protection Short circuit Protection Pin 3 Source Page 1 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits technology. Fully protected by embedded Vbb General Description N channel vertical power FET in Smart SIPMOS protection functions. M Drain Pin 2 and 4 (TAB) 2004-02-02 BTS 3134 D Maximum Ratings at T j = 25C, unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection T j = -40...150C Continuous input current VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation T C = 85 C 6cm 2 cooling area , T A = 85 C Unclamped single pulse inductive energy 1) Load dump protection VLoadDump2) = V A + VS EAS VLD Tj Tstg Ptot 43 1.1 3 65 J V IIN no limit -40 ...+150 -55 ... +150 W mA Symbol VDS VDS(SC) Value 42 30 Unit V Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: SMD: junction - ambient @ min. footprint @ 6 cm2 cooling area 3) RthJC RthJA 1 Not tested, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. RL = 4.5 , VA = 13.5 V VIN = 0 and 10 V, t d = 400 ms, RI = 2 , 2 kV E 40/150/56 1.5 115 55 Page 2 -0.2V VIN 10V | IIN | 2 C K/W 2004-02-02 BTS 3134 D Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150C VDS = 32 V, VIN = 0 V Input threshold voltage ID = 1.4 mA, Tj = 25 C ID = 1.4 mA, Tj = 150 C On state input current On-state resistance VIN = 5 V, ID = 3 A, Tj = 25 C VIN = 5 V, ID = 3 A, Tj = 150 C On-state resistance VIN = 10 V, ID = 3 A, Tj = 25 C VIN = 10 V, ID = 3 A, Tj = 150 C Nominal load current Tj < 150C, VIN = 10 V, TA = 85 C, SMD 1) Nominal load current VIN = 10 V, VDS = 0.5 V, TC = 85 C, Tj < 150C Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, tm = 200 s ID(lim) 18 24 30 ID(ISO) ID(Nom) 3.5 7.1 RDS(on) 35 65 50 90 A IIN(on) RDS(on) 45 75 60 100 VIN(th) 1.3 0.8 1.7 10 2.2 30 A m V IDSS 1.5 10 A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1@ 6 cm 2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. Page 3 2004-02-02 BTS 3134 D Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Dynamic Characteristics Turn-on time VIN to 90% I D: t on t off -dV DS/dt on dV DS/dt off 60 60 0.3 0.7 100 100 1.5 1.5 V/s s , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: Symbol min. Values typ. max. Unit Protection Functions1) Thermal overload trip temperature Input current protection mode Input current protection mode Tj = 150 C Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 C, Vbb = 12 V EAS 3 J Tjt IIN(Prot) IIN(Prot) 150 80 175 160 130 300 300 C A Inverse Diode Inverse diode forward voltage IF = 15 A, tm = 250 s, VIN = 0 V, tP = 300 s VSD 1.0 V 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Page 4 RL = 4.7 RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: , VIN = 10 to 0 V, Vbb = 12 V RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 2004-02-02 BTS 3134 D Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S 3 D 2 ID VDS Vbb Z D S VIN HITFET Input circuit (ESD protection) V Gate Drive Input Short circuit behaviour IN I IN t Source/ Ground I D t T t j t Page 5 2004-02-02 BTS 3134 D 1 Maximum allowable power dissipation Ptot = f(TC) resp. Ptot = f(TA) @ R thJA=55 K/W 3 2 On-state resistance RON=f(Tj); I D=3A; VIN=10V 100 m W Rthjc = 1.5 K/W max. 80 RDS(on) Ptot 2 SMD @ 6cm2 70 60 50 40 typ. 1.5 1 30 20 10 0.5 0 -50 -25 0 25 50 75 100 C 150 0 -50 -25 0 25 50 75 100 125 C 175 TA;TC Tj 3 On-state resistance RON=f(Tj); ID=3A; VIN=5V 110 4 Typ. input threshold voltage VIN(th) = f(T j); ID = 0.7 mA; V DS = 12V 2 max. V m 90 1.6 RDS(on) VGS(th) 80 70 60 typ. 1.4 1.2 1 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 C 175 0.8 0.6 0.4 0.2 0 -50 C -25 0 25 50 75 100 150 Tj Page 6 Tj 2004-02-02 BTS 3134 D 5 Typ. transfer characteristics ID=f(VIN ); VDS=12V; TJstart=25C 30 6 Typ. short circuit current I D(lim) = f(Tj); VDS=12V Parameter: VIN 30 A A 20 I D(SC) 20 Vin=10V ID 15 15 5V 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 10 0 -50 -25 0 25 50 75 100 125 C 175 VIN Tj 7 Typ. output characteristics ID=f(VDS ); TJstart =25C Parameter: VIN 35 A 10V 8 Typ. off-state drain current IDSS = f(Tj ) 11 A max. 9 7V 25 8 I DSS 6V ID 7 6 5 4 20 4V 5V 15 10 Vin=3V 3 2 1 typ. 5 0 0 1 2 3 4 V 6 0 -50 -25 0 25 50 75 100 125 C 175 VDS Page 7 Tj 2004-02-02 BTS 3134 D 9 Typ. overload current ID(lim) = f(t), Vbb =12 V, no heatsink Parameter: Tjstart 40 10 Typ. transient thermal impedance Z thJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 2 K/W D=0.5 A -40C 10 1 0.2 0.1 0.05 30 I D(lim) 25 25C ZthJA 10 0 0.02 0.01 20 85C 15 150C 10 -1 10 10 -2 5 Single pulse 0 0 1 2 3 ms t 5 10 -3 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 s 10 3 tp 11 Determination of ID(lim) ID(lim) = f(t); tm = 200s Parameter: TJstart 40 A 30 I D(lim) -40C 25 25C 20 85C 15 150C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Page 8 2004-02-02 BTS 3134 D Package P-TO252-3-1 6.5 +0.15 -0.10 A 1 0.1 Ordering Code Q67060-S7433-A001 2.3 +0.05 -0.10 B 5.4 0.1 0.8 0.15 0.9 +0.08 -0.04 9.9 0.5 6.22 -0.2 0.51 min 0.15 max per side 3x 0.75 0.1 0...0.15 0.5 +0.08 -0.04 1 0.1 2.28 4.57 0.25 M AB 0.1 GPT09051 All metal surfaces tin plated, except area of cut. Page 9 2004-02-02 BTS 3134 D Revision History : Previous version : Page 3 2004-02-02 2002-09-04 Subjects (major changes since last revision) VIN(th) test conditions from ID=0.7mA to ID=1.4mA For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com HITFET(R), SIPMOS(R) are registered trademarks of Infineon Technologies AG. Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2004-02-02 |
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